Logo BSU

Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/342345
Title: Microstructure of molibdenum-silicon surface layers formed by compression plasma flows
Authors: Astashynski, V.M.
Uglov, V.V.
Kvasov, N.T.
Petukhou, Yu.A.
Azhoichyk, A.A.
Kudaktsin, R.S.
Kuzmitski, A.M.
Mishchuk, A.A.
Open Researcher and Contributor ID: 0000-0003-1929-4996
Keywords: ЭБ БГУ::ТЕХНИЧЕСКИЕ И ПРИКЛАДНЫЕ НАУКИ. ОТРАСЛИ ЭКОНОМИКИ::Машиностроение
ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2012
Publisher: Kovcheg
Citation: Plasma physics and plasma technology, Minsk, Belarus, 17–21 сентября 2012 года. Vol. Volume I. – Minsk, Belarus: Kovcheg, 2012. – P. 376-379.
Abstract: Interaction of compression plasma flows (CPF) with metals and semiconductors is intensively studied for the last decade as an effective tool for synthesis of novel materials and their modification. Peculiarities of CPF-action are connected with high thermal power density transmitted to the target (up to 4-5 GW/m2) and relatively long duration of stable plasma flow (up to 200 μs). CPF treatment of binary and multicomponent materials results in the formation of supersaturated solid solutions, intermetallides, deep alloying, improvement of hardness and thermal stability of mechanical properties /1-3/. Thereupon one of promising research direction is connected with CPF action on binary “metalsilicon” systems and their use for the formation of metal silicides. The use of concentrated energy flows is effective for synthesis of refractory compounds, for example, molybdenum silicides that have broad range of applications due to their high melting point, low electrical resistance, high oxidation resistance and low density /4,5/.
URI: https://elib.bsu.by/handle/123456789/342345
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:Кафедра физики твердого тела и нанотехнологий (статьи)

Files in This Item:
File Description SizeFormat 
Асташинский.pdf1,04 MBAdobe PDFView/Open
Show full item record Google Scholar



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.