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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/305311
Title: Effect of morphology on the phonon thermal conductivity in Si/Ge superlattice nanowires
Authors: Khaliava, I.I.
Khamets, A.L.
Safronov, I.V.
Filonov, A.B.
Suemasu, T.
Migas, D.B.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2023
Publisher: Effect of morphology on the phonon thermal conductivity in Si/Ge superlattice nanowires
Citation: Jpn. J. Appl. Phys. 2023; 62:SD1013.
Abstract: We used nonequilibrium molecular dynamics to investigate the role of morphology in the phonon thermal conductivity of 100〉,〈110〉,〈111〉and〈112〉-oriented Si/Ge superlattice nanowires at 300 K. Such nanowires with 〈112〉 growth direction were found to possess the lowest values of the thermal conductivity [1.6 W/(m·K) for a Si and Ge segment thickness of ∼3 nm] due to the lowest average group velocity and highly effective {113} facets and Si/Ge(112) interface for phonon-surface and phonon-interface scattering, respectively. Comparison with homogeneous and core/shell Si and Ge nanowires showed that the superlattice morphology is the most efficient to suppress the thermal conductivity.
URI: https://elib.bsu.by/handle/123456789/305311
DOI: 10.35848/1347-4065/aca912
Scopus: 85145661211
Sponsorship: This work has been supported by the Belarusian National Research Program “Materials science, new materials and technology.” D.B. Migas acknowledges the support of the MEPhI Program Priority 2030. The resources of NRNU MEPhI high-performance computing center were used for this study.
Licence: info:eu-repo/semantics/openAccess
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