Effect of Krypton Irradiation on the Surface Morphology of Indium Antimonide Films on Gallium Arsenide Substrates

Abstract

In this work, studies have been carried out on the effect of irradiation with krypton ions with an energy of 280 keV at a dose of 10 12 and 10 13 cm-2 on the morphology of heteroepitaxial films of indium antimonide on gallium arsenide GaAs substrates by atomic force microscopy. To quantify the damage and determine the implantation profile, modeling have been carried out in the SRIM program. The studies carried out have shown that, as a result of irradiation, the formation of cone-shaped structures is observed on the surface of InSb films. The change in the surface topography is related to the angular dependence of the sputtering yield and the predominant sputtering of antimony atoms from the surface of indium antimonide heteroepitaxial films on gallium arsenide substrates