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https://elib.bsu.by/handle/123456789/292829
Title: | Effect of gamma irradiation on electrical resistivity of indium antimonide films |
Authors: | Kolesnikova, E. A. Uglov, V. V. Kuleshov, A. K. Rusalsky, D. P. Teterukov, E. V. Tochilin, E. V. |
Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
Issue Date: | 2022 |
Publisher: | Минск : БГУ |
Citation: | Материалы и структуры современной электроники : материалы X Междунар. науч. конф., Минск, 12–14 окт. 2022 г. / Белорус. гос. ун-т ; редкол.: В. Б. Оджаев (гл. ред.) [и др.]. – Минск : БГУ, 2022. – С. 231-234. |
Abstract: | This paper presents a study of the effect of Co 60 gamma irradiation with an energy density of at least 10 15 –10 17 cm−2 on the electrical resistivity of indium antimonide films formed by explosive thermal evaporation. The irradiation conditions are imitation of radiation exposure in Earth orbit with an absorbed dose of up to 150 kGy. The temperature dependences of electrical resistivity were obtained in the range from RT to 150 °C. It was found that with a gamma irradiation fluence of 10 16 cm−2 in a narrow temperature range the resistivity increases. In the case of maximum fluence of gamma irradiation (10 17 cm−2 ) the resistivity decreases. It is assumed that this is due to a change in the position of the Fermi level during irradiation |
Description: | Дефектно-примесная инженерия. Радиационные эффекты в полупроводниках |
URI: | https://elib.bsu.by/handle/123456789/292829 |
ISBN: | 978-985-881-440-3 |
Sponsorship: | The work was supported by the State Program of the Scientific Researches «Materials science, new materials and technologies» under the assignment 1.3.2 «Radiation-resistant heteroepitaxial structures of indium antimonide on gallium arsenide substrates» |
Licence: | info:eu-repo/semantics/openAccess |
Appears in Collections: | 2022. Материалы и структуры современной электроники |
Files in This Item:
File | Description | Size | Format | |
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231-234.pdf | 360,1 kB | Adobe PDF | View/Open |
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