Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/292756| Title: | Surface morphology and crystal structure of indium antimonide films |
| Authors: | Teterukov, E. V. Kolesnikova, E. A. Uglov, V. V. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2022 |
| Publisher: | Минск : БГУ |
| Citation: | Материалы и структуры современной электроники : материалы X Междунар. науч. конф., Минск, 12–14 окт. 2022 г. / Белорус. гос. ун-т ; редкол.: В. Б. Оджаев (гл. ред.) [и др.]. – Минск : БГУ, 2022. – С. 5-9. |
| Abstract: | Thin films of indium antimonide deposited in vacuum on a single-crystal gallium arsenide substrate by explosive thermal evaporation at a temperature of 375 °C and by molecular beam epitaxy at a temperature of 420 °C were studied. The morphology and crystal structure of the obtained films were studied by atomic force microscopy and high-resolution X-ray diffractometry. Features of the surface of films formed by molecular beam epitaxy are revealed. It is shown that the structural properties of indium antimonide films obtained by two methods on single-crystal gallium arsenide substrates are similar |
| Description: | Свойства, диагностика и применение полупроводниковых материалов и структур на их основе |
| URI: | https://elib.bsu.by/handle/123456789/292756 |
| ISBN: | 978-985-881-440-3 |
| Sponsorship: | The work was financial supported by the Belarusian Republican Foundation for Fundamental Research and Ministry of Education of the Republic of Belarus under the Grant № Т22MV-008 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 2022. Материалы и структуры современной электроники |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.