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https://elib.bsu.by/handle/123456789/288252| Заглавие документа: | Transient electrical and optical characteristics of electron and proton irradiated sige detectors |
| Авторы: | Ceponis, Tomas Deveikis, Laimonas Lastovskii, Stanislau Makarenko, Leonid Pavlov, Jevgenij Pukas, Kornelijus Rumbauskas, Vytautas Gaubas, Eugenijus |
| Тема: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Математика |
| Дата публикации: | 2020 |
| Издатель: | MDPI AG |
| Библиографическое описание источника: | Sensors 2020;20(23):1-12. |
| Аннотация: | The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si1−xGex structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n+p structure. |
| URI документа: | https://elib.bsu.by/handle/123456789/288252 |
| DOI документа: | 10.3390/s20236884 |
| Scopus идентификатор документа: | 85097271768 |
| Финансовая поддержка: | This research was funded by Research Council of Lithuania according to Lithuania-Belarus collaboration project S-LB-19-1 “Silicon-germanium novel alloys for creation of radiation-hard semiconductor devices”. |
| Лицензия: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | Статьи факультета прикладной математики и информатики |
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| sensors_20_06884_pdf.pdf | 808,67 kB | Adobe PDF | Открыть |
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