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https://elib.bsu.by/handle/123456789/28055| Title: | MODELING OF ION-IMPLANTED ATOMS DIFFUSION DURING THE EPITAXIAL GROWTH OF THE LAYER |
| Authors: | Velichko, O. I. Burko, V. A. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2011 |
| Citation: | Взаимодействие излучений с твердым телом = Interaction of Radiation with Solids: Материалы 9-й Междунар. конф., 20-22 сент. 2011 г. — Минск,2011. |
| Abstract: | The equation of impurity diffusion due to formation, migration, and dissolution of the pairs “impurity atom ─ intrinsic point defect” taking into account the nonuniform distributions of nonequilibrium point defects and drift of the pairs in the field of elastic stresses is presented in the coordinate system associated with the moving surface of the growing epitaxial layer. The analytical solution of this equation for the low fluence ion implantation has been obtained. |
| URI: | http://elib.bsu.by/handle/123456789/28055 |
| Appears in Collections: | 2011. Взаимодействие излучений с твердым телом |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Velichko-испр.doc | 215 kB | Microsoft Word | View/Open |
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