MODELING OF ION-IMPLANTED ATOMS DIFFUSION DURING THE EPITAXIAL GROWTH OF THE LAYER

Abstract

The equation of impurity diffusion due to formation, migration, and dissolution of the pairs “impurity atom ─ intrinsic point defect” taking into account the nonuniform distributions of nonequilibrium point defects and drift of the pairs in the field of elastic stresses is presented in the coordinate system associated with the moving surface of the growing epitaxial layer. The analytical solution of this equation for the low fluence ion implantation has been obtained.