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https://elib.bsu.by/handle/123456789/264722| Title: | Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers |
| Authors: | Yuryev, V.A. Chizh, K.V. Chapnin, V.A. Mironov, S.A. Dubkov, V.P. Uvarov, O.V. Kalinushkin, V.P. Senkov, V.M. Nalivaiko, O.Y. Novikau, A.G. Gaiduk, P.I. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2015 |
| Publisher: | American Institute of Physics Inc. |
| Citation: | J Appl Phys 2015;117(20). |
| Abstract: | Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si3N4/SiO2/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about -2%/ °C in the temperature interval from 25 to 50 °C. |
| URI: | https://elib.bsu.by/handle/123456789/264722 |
| DOI: | 10.1063/1.4921595 |
| Scopus: | 84930079192 |
| Sponsorship: | Seventh Framework Programme (FP7), 298932 |
| Appears in Collections: | Статьи |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 1503.05700.pdf | 798,61 kB | Adobe PDF | View/Open |
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