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dc.contributor.authorYuryev, V.A.-
dc.contributor.authorChizh, K.V.-
dc.contributor.authorChapnin, V.A.-
dc.contributor.authorMironov, S.A.-
dc.contributor.authorDubkov, V.P.-
dc.contributor.authorUvarov, O.V.-
dc.contributor.authorKalinushkin, V.P.-
dc.contributor.authorSenkov, V.M.-
dc.contributor.authorNalivaiko, O.Y.-
dc.contributor.authorNovikau, A.G.-
dc.contributor.authorGaiduk, P.I.-
dc.date.accessioned2021-07-26T08:40:41Z-
dc.date.available2021-07-26T08:40:41Z-
dc.date.issued2015-
dc.identifier.citationJ Appl Phys 2015;117(20).ru
dc.identifier.urihttps://elib.bsu.by/handle/123456789/264722-
dc.description.abstractPlatinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si3N4/SiO2/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about -2%/ °C in the temperature interval from 25 to 50 °C.ru
dc.description.sponsorshipSeventh Framework Programme (FP7), 298932ru
dc.language.isoenru
dc.publisherAmerican Institute of Physics Inc.ru
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titlePt silicide/poly-Si Schottky diodes as temperature sensors for bolometersru
dc.typearticleru
dc.rights.licenseCC BY 4.0ru
dc.identifier.DOI10.1063/1.4921595-
dc.identifier.scopus84930079192-
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