Cadmium-free Thin-Film Cu(In,Ga)Se2(In2S3) Heterophotoelements Fabrication and Properties

Abstract

The method of heat treatment of metallic Cu–In–Ga layers in the N2 inert atmosphere in the presence of selenium and sulfur vapors was used to grow homogeneous films of Cu(In,Ga)(S,Se)2 alloys onto which the CdS or In2S3 films were deposited and, on the basis of these structures, the thin-film glass/Mo/p-Cu(In,Ga)(S,Se)2/n-(In2S3,CdS)/n-ZnO/Ni–Al photoelements were fabricated. The mechanisms of charge transport and the processes of photosensitivity in the obtained structures subjected to irradiation with natural and linearly polarized light are discussed. The broadband hotosensitivity of thin-film heterophotoelements and the induced photopleochroism were detected; these findings indicate that there is an interference-related blooming of the structures obtained. It is concluded that it is possible to use ecologically safe cadmium-free thin-film heterostructures as high-efficiency photoconverters of solar radiation.