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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/257252
Title: Grating-gate high electron mobility transistors for terahertz modulation
Authors: Landgrebe-Christiansen, A.
Schunck, J. N.
Popok, V. N.
Issue Date: 2020
Publisher: Минск : БГУ
Citation: Материалы и структуры современной электроники : материалы IX Междунар. науч. конф., Минск, 14–16 окт. 2020 г. / Белорус. гос. ун-т ; редкол.: В. Б. Оджаев (гл. ред.) [и др.]. – Минск : БГУ, 2020. – С. 5-8.
Abstract: Terahertz (THz) modulators are required for wireless communication, ultrafast THz interconnects and sensing applications. Great achievements in modulation are reported utilising GaN devices with two-dimensional electron gas (2DEG). In the current work, circular grating-gate transistors based on AlGaN/GaN heterostructures are designed and fabricated. Electrical characterisation of these devices reveals ohmic-like contacts for the source and drain, Schottky barrier for the gate structures and output transistor characteristics confirming the operation through a channel with 2DEG. These circular transistor structures can become a basis for the development of THz modulators where the plasmon polaritons of the grating metal structures will be coupled with the plasmon waves of the 2DEG allowing filtering and modulating THz waves
Description: Свойства, диагностика и применение полупроводниковых материалов и структур на их основе
URI: https://elib.bsu.by/handle/123456789/257252
ISBN: 978-985-881-073-3
Appears in Collections:2020. Материалы и структуры современной электроники

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