Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/247008| Title: | Прыжковая проводимость облученного гамма-квантами германия, легированного галлием |
| Authors: | Ермолаев, О. П. Рамде, А. Т. Хаким, С. А. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 1995 |
| Publisher: | Минск : Універсітэцкае |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Механика. – 1995. – № 3. – С. 37-40. |
| Abstract: | The influence of high y-ray doses in gallium-doped germanium was investigated in the 1.5 — 300 K range by measuring the electrical properties. It was concluded that introduction of donor defects played the main role in the removal of holes from the valence band as a result of y-ray irradiation |
| URI: | https://elib.bsu.by/handle/123456789/247008 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 1995, №3 (сентябрь) |
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