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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/247008
Title: Прыжковая проводимость облученного гамма-квантами германия, легированного галлием
Authors: Ермолаев, О. П.
Рамде, А. Т.
Хаким, С. А.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 1995
Publisher: Минск : Універсітэцкае
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Механика. – 1995. – № 3. – С. 37-40.
Abstract: The influence of high y-ray doses in gallium-doped germanium was investigated in the 1.5 — 300 K range by measuring the electrical properties. It was concluded that introduction of donor defects played the main role in the removal of holes from the valence band as a result of y-ray irradiation
URI: https://elib.bsu.by/handle/123456789/247008
ISSN: 0321-0367
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:1995, №3 (сентябрь)

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