Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/247008Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ермолаев, О. П. | - |
| dc.contributor.author | Рамде, А. Т. | - |
| dc.contributor.author | Хаким, С. А. | - |
| dc.date.accessioned | 2020-07-30T12:24:20Z | - |
| dc.date.available | 2020-07-30T12:24:20Z | - |
| dc.date.issued | 1995 | - |
| dc.identifier.citation | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Механика. – 1995. – № 3. – С. 37-40. | ru |
| dc.identifier.issn | 0321-0367 | - |
| dc.identifier.uri | https://elib.bsu.by/handle/123456789/247008 | - |
| dc.description.abstract | The influence of high y-ray doses in gallium-doped germanium was investigated in the 1.5 — 300 K range by measuring the electrical properties. It was concluded that introduction of donor defects played the main role in the removal of holes from the valence band as a result of y-ray irradiation | ru |
| dc.language.iso | ru | ru |
| dc.publisher | Минск : Універсітэцкае | ru |
| dc.rights | info:eu-repo/semantics/openAccess | en |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Прыжковая проводимость облученного гамма-квантами германия, легированного галлием | ru |
| dc.type | article | ru |
| dc.rights.license | CC BY 4.0 | ru |
| Appears in Collections: | 1995, №3 (сентябрь) | |
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