Logo BSU

Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/247008
Full metadata record
DC FieldValueLanguage
dc.contributor.authorЕрмолаев, О. П.-
dc.contributor.authorРамде, А. Т.-
dc.contributor.authorХаким, С. А.-
dc.date.accessioned2020-07-30T12:24:20Z-
dc.date.available2020-07-30T12:24:20Z-
dc.date.issued1995-
dc.identifier.citationВестник Белорусского государственного университета. Сер. 1, Физика. Математика. Механика. – 1995. – № 3. – С. 37-40.ru
dc.identifier.issn0321-0367-
dc.identifier.urihttps://elib.bsu.by/handle/123456789/247008-
dc.description.abstractThe influence of high y-ray doses in gallium-doped germanium was investigated in the 1.5 — 300 K range by measuring the electrical properties. It was concluded that introduction of donor defects played the main role in the removal of holes from the valence band as a result of y-ray irradiationru
dc.language.isoruru
dc.publisherМинск : Універсітэцкаеru
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleПрыжковая проводимость облученного гамма-квантами германия, легированного галлиемru
dc.typearticleru
dc.rights.licenseCC BY 4.0ru
Appears in Collections:1995, №3 (сентябрь)

Files in This Item:
File Description SizeFormat 
37-40.pdf188,53 kBAdobe PDFView/Open
Show simple item record Google Scholar



PlumX

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.