Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/246358| Title: | Влияние уровня легирования на насыщение тока в n-канальном МОП-ПТ |
| Authors: | Андреев, А. Д. Бельский, А. М. Валиев, А. А. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 1996 |
| Publisher: | Минск : Універсітэцкае |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 1996. – № 1. – С. 26-29. |
| Abstract: | Saturation currents in n-channal MOS FET were measured. It is shown that the saturation drain-sourse voltage decreases with increasing of dopant level. This voltage is smoller than the effective gate voltage. The explanation of the current saturation can be based on drift velocity saturation |
| URI: | https://elib.bsu.by/handle/123456789/246358 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 1996, №1 (январь) |
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