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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/246358
Title: Влияние уровня легирования на насыщение тока в n-канальном МОП-ПТ
Authors: Андреев, А. Д.
Бельский, А. М.
Валиев, А. А.
Issue Date: 1996
Publisher: Минск : Універсітэцкае
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 1996. – № 1. – С. 26-29.
Abstract: Saturation currents in n-channal MOS FET were measured. It is shown that the saturation drain-sourse voltage decreases with increasing of dopant level. This voltage is smoller than the effective gate voltage. The explanation of the current saturation can be based on drift velocity saturation
URI: https://elib.bsu.by/handle/123456789/246358
ISSN: 0321-0367
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:1996, №1 (январь)

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