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https://elib.bsu.by/handle/123456789/233801| Title: | Monte Carlo Simulation of Pulsed Laser Irradiation Effect on Electrical Characteristics of Submicron SOI MOSFET |
| Authors: | Borzdov, A. V. Borzdov, V. M. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2019 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом = Interaction of Radiation with Solids : материалы 13-й Междунар. конф., Минск, Беларусь, 30 сент. – 3 окт. 2019 г. / редкол.: В. В. Углов (отв. ред.) [и др.]. – Минск : БГУ, 2019. – С. 23-25. |
| Abstract: | Self-consistent ensemble Monte Carlo simulation of charge carrier transport in submicron SOI MOSFET is performed. A short-channel SOI MOSFET with 100 nm channel length is considered. The transistor drain current response under the effect of picosecond pulsed laser irradiation is calculated. The simulation is done for the irradiation power density of 5*10 10 W/m2 for 532 nm and 650 nm wavelengths. Time dynamics of the drain current density under the irradiation effect has been investigated for several values of the drain bias |
| Description: | Секция 1. Процессы взаимодействия излучения и плазмы с твердым телом = Section 1. Processes of Radiation and Plasma Interaction with Solids |
| URI: | http://elib.bsu.by/handle/123456789/233801 |
| ISSN: | 2663-9939 |
| Appears in Collections: | 2019. Взаимодействие излучений с твердым телом = Interaction of Radiation with Solids |
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