Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/229944| Title: | Effects of atomically engineered junction interface on resistive switching performance in Al-WOx-Al resistive memory |
| Authors: | Kim, Hyunsang Im, Hyunsik Kim, Jongmin Jo, Yongcheol Han, J. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2014 |
| Citation: | Joint Belarus-Korea Symposium on the Physics of Functional Nanomaterials and Nanodevices : Program & Book of Abstracts, Minsk, June 17-19, 2014. - P. 22. |
| URI: | http://elib.bsu.by/handle/123456789/229944 |
| Appears in Collections: | 2014. Joint Belarus-Korea Symposium on the Physics of Functional Nanomaterials and Nanodevices : Program & Book of Abstracts |
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