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https://elib.bsu.by/handle/123456789/223934| Title: | Процессы формирования нанокристаллов А 3 В 5 и IV группы в структурах SiO 2 /Si методом высокодозной ионной имплантации и термообработок |
| Authors: | Моховиков, М. А. Комаров, Ф. Ф. |
| Issue Date: | 2014 |
| Publisher: | Минск : Изд. центр БГУ |
| Citation: | Сборник научных работ студентов Республики Беларусь "НИРС 2013" / редкол. : А. И. Жук (пред.) [и др.]. - Минск : Изд. центр БГУ, 2014. - С. 28-32 |
| Abstract (in another language): | The formation of tin nanoclusters as well as A 3 B 5 nanocrystals in SiO 2 /Si matrix using a high-dose implantation technique followed by high-temperature processing was studied. Structure and composition were studied by Rutherford backscattering spectroscopy and plan-view and cross-sectional transmission electron microscopy. In a case of the A 3 B 5 nanocrystals formation a broad photoluminescence band with the maximum of 0.99 eV is registered. It has been found that postimplantation annealing results in the β-Sn precipitation as well as the formation of SnO 2 -enriched regions in SiO 2 :Sn matrix. The rest of the impurity is dissolved in the matrix of SiO2 |
| URI: | http://elib.bsu.by/handle/123456789/223934 |
| ISBN: | 978-985-553-227-0 |
| Appears in Collections: | Сборник научных работ студентов Республики Беларусь "НИРС 2013" |
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