Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/223775| Title: | Эволюция дефектов структуры в имплантированных мышьяком слоях Si1-xGex |
| Authors: | Гайдук, П. И. Тишков, В. С. Ширяев, С. Ю. Ларсен, А. Н. Комаров, Ф. Ф. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 1997 |
| Publisher: | Минск : Універсітэцкае |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 1997. – № 3. – С. 19-25. |
| Abstract: | The transformation of structural defects in high-dose arsenic-implanted, epitaxially grown, relaxed Si1-xGex (x≤0,5) during rapid thermal annealing (RTA) has been investigated by TEM as a function of the composition x. The formation of the monoclinic GeAs precipitates was revealed at high RTA temperature. The precipitates were found to be coexisted with dislocations in the alloys with x=0,15—0,25 but not coexisted in the alloys with x = 0,4—0,5. The three-dimensional defects of a new type (so called hair-like defects) were registered in the alloys with x = 0, 15—0,25. Such defects were not observed earlier in silicon and are supposed to be a result of comprehensive interaction between dislocations and GeAs precipitates. |
| URI: | http://elib.bsu.by/handle/123456789/223775 |
| ISSN: | 0321-0367 |
| Sponsorship: | Настоящая работа выполнялась при финансовом содействии Фонда фундаментальных исследований Беларуси (грант №Т96-159), а также в рамках NATO Linkage Grant №940672. Авторы выражают благодарность Джону Хансену за помощь в приготовлении GeSi сплавов методом МЛЭ. |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 1997, №3 (сентябрь) |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.