Эволюция дефектов структуры в имплантированных мышьяком слоях Si1-xGex

Abstract

The transformation of structural defects in high-dose arsenic-implanted, epitaxially grown, relaxed Si1-xGex (x≤0,5) during rapid thermal annealing (RTA) has been investigated by TEM as a function of the composition x. The formation of the monoclinic GeAs precipitates was revealed at high RTA temperature. The precipitates were found to be coexisted with dislocations in the alloys with x=0,15—0,25 but not coexisted in the alloys with x = 0,4—0,5. The three-dimensional defects of a new type (so called hair-like defects) were registered in the alloys with x = 0, 15—0,25. Such defects were not observed earlier in silicon and are supposed to be a result of comprehensive interaction between dislocations and GeAs precipitates.