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https://elib.bsu.by/handle/123456789/223587| Title: | Structural and optical properties of Si/b-FeSi2/Si heterostructures formed by ion implantation and MBE |
| Authors: | Batalov, R. I. Bayazitov, R. M. Galkin, N. G. Chusovitin, E. A. Goroshko, D.L. Shamirzaev, T. S. Zhuravlev, K. S. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2007 |
| Publisher: | Минск : Изд. центр БГУ |
| Citation: | Взаимодействие излучений с твердым телом = Interaction of radiation witli solids : материалы 7-й Междунар. конф., Минск, 26-28 сент. 2007 г. / редкол. В. М. Анищик (отв. ред.) [и др.]. — Минск : Изд. центр БГУ, 2007. — С. 164-165. |
| Abstract: | The method of ultrahigh vacuum and low-temperature cleaning of Si(100) and Si(111) samples implanted by Fe* ions with different fluencies (Ф =... -1.8x10" cm'^) and subsequent epitaxial growth of a Si layer has been applied for the first time. The possibility of the formation of atomically smooth and reconstructed Si surfaces after Fe* implantation and nanosecond pulsed ionbeam treatment has been shown. It was found that smooth Si films with thickness up to 1.7 ц т and with reconstructed surface grow up to fluence Ф = 10^16 cm^-2. The formation of b-FeSi2 precipitates inside Si matrix after the growth of epitaxial Si layer by MBE has been confirmed by optical spectroscopy. Low temperature photoluminescence measurements in the range of 1300-1700 nm showed that light emission of the formed Si/b-FeSi2/Si heterostructures is due to contributions from b-FeSi2 precipitates and dislocations. |
| URI: | http://elib.bsu.by/handle/123456789/223587 |
| ISBN: | 978-985-476-530-3 |
| Appears in Collections: | 2007. Взаимодействие излучений с твердым телом |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 164-165.pdf | 457,12 kB | Adobe PDF | View/Open |
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