Structural and optical properties of Si/b-FeSi2/Si heterostructures formed by ion implantation and MBE

Abstract

The method of ultrahigh vacuum and low-temperature cleaning of Si(100) and Si(111) samples implanted by Fe* ions with different fluencies (Ф =... -1.8x10" cm'^) and subsequent epitaxial growth of a Si layer has been applied for the first time. The possibility of the formation of atomically smooth and reconstructed Si surfaces after Fe* implantation and nanosecond pulsed ionbeam treatment has been shown. It was found that smooth Si films with thickness up to 1.7 ц т and with reconstructed surface grow up to fluence Ф = 10^16 cm^-2. The formation of b-FeSi2 precipitates inside Si matrix after the growth of epitaxial Si layer by MBE has been confirmed by optical spectroscopy. Low temperature photoluminescence measurements in the range of 1300-1700 nm showed that light emission of the formed Si/b-FeSi2/Si heterostructures is due to contributions from b-FeSi2 precipitates and dislocations.