Mechanism of hydrogen-related shallow donors formation in Ge(1-x)Si(x) crystals implanted with protons

Abstract

Hydrogen is а ubiquitous impurity in semiconductors. lt is introduced inadvertently during plasma processing, wet etching, polishing and some cleaning processes. Previously we found that heat-treatments of the proton-implanted Ge samples in the temperature range 200-300 °С result in the formation of shallow hydrogen-related donors. An analysis of changes in the spatial distribution of the H-related donors upon isothermal and isochronal anneals has shown that the donors appear in а region which is close to the projected depth of implanted protons at the initial stages of heat-treatments in the temperature range 200 - 300 °С and spread out of this region upon an increase in annealing time or annealing temperature. Results of а study of defects induced bу proton implantations followed Ьу anneals in Ge-rich SiGe alloys are reported in this paper.