Properties of InAs quantum dots grown by molecular beam epitaxy on Ge (100)

Abstract

InAs quantum dots (QDs) imbedded in a GaAs matrix grown by molecular beam epitaxy (MBE) on Ge (100) substrates have been investigated using transmission electron microscopy, photoluminescence spectroscopy, capacitance voltage spectroscopy and deep level transient spectroscopy. In comparison to a reference sample grown on GaAs (100) substrate with the same growth parameters, we observe similar QD densities, but smaller QDs with a broader size distribution on Ge substrate. This is attributed to a strained GaAs matrix in these samples.