Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/223121| Title: | Ограниченная диффузией рекомбинация носителей заряда на ростовых дефектах в р-кремнии |
| Authors: | Колковский, И. И. Лугаков, П. Ф. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 1997 |
| Publisher: | Минск : Універсітэцкае |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 1997. – № 2. – С. 27-29. |
| Abstract: | The recombination of the charge carrier in p-Si (p0 ~ 1,3*1015 cm-3) grown by Chochralski method has been studied. The temperature and injection dependences of the charge-carrier lifetime were measured. The results were interpreted assuming that the charge-carrier lifetime is limited by the diffusion velocity to grown-in defects of structure surrounded by the potential barrier. |
| URI: | http://elib.bsu.by/handle/123456789/223121 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 1997, №2 (май) |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.