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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/223121
Title: Ограниченная диффузией рекомбинация носителей заряда на ростовых дефектах в р-кремнии
Authors: Колковский, И. И.
Лугаков, П. Ф.
Issue Date: 1997
Publisher: Минск : Універсітэцкае
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 1997. – № 2. – С. 27-29.
Abstract: The recombination of the charge carrier in p-Si (p0 ~ 1,3*1015 cm-3) grown by Chochralski method has been studied. The temperature and injection dependences of the charge-carrier lifetime were measured. The results were interpreted assuming that the charge-carrier lifetime is limited by the diffusion velocity to grown-in defects of structure surrounded by the potential barrier.
URI: http://elib.bsu.by/handle/123456789/223121
ISSN: 0321-0367
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:1997, №2 (май)

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