Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/223072| Title: | Особенности ВАХ МОП-ПТ с высоколегированной подложкой |
| Authors: | Андреев, А. Д. Бельский, А. М. Валиев, А. А. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 1997 |
| Publisher: | Минск : Універсітэцкае |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 1997. – № 1. – С. 26-29. |
| Abstract: | The current-voltage characteristics of the MOSFET with a highly-doped substrate have been measured. It has been shown that the onset voltage for the channal current saturation is smaller than the effective gate voltage, and it increases with temperature. These peculiarities may be caused by an increase in the electrical field, decrease in the electron mobility near the drain region or by the drift velocity saturation. |
| URI: | http://elib.bsu.by/handle/123456789/223072 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 1997, №1 (январь) |
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