Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/223065| Title: | Термические пики при прохождении высокоэнергетических ионов в кристаллах и формирование треков |
| Authors: | Комаров, А. А. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 1997 |
| Publisher: | Минск : Універсітэцкае |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 1997. – № 1. – С. 15-17. |
| Abstract: | On the basis of the "thermal spike" model consideration was given to effects of high-energy ion implantation into targets with different types of conductivity (Ge, Cu, Pb). Numerical calculation of excited region temperature as a function of time and distance from track axis is presented. |
| URI: | http://elib.bsu.by/handle/123456789/223065 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 1997, №1 (январь) |
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