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dc.contributor.authorКомаров, А. А.-
dc.date.accessioned2019-07-05T09:19:24Z-
dc.date.available2019-07-05T09:19:24Z-
dc.date.issued1997-
dc.identifier.citationВестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 1997. – № 1. – С. 15-17.ru
dc.identifier.issn0321-0367-
dc.identifier.urihttp://elib.bsu.by/handle/123456789/223065-
dc.description.abstractOn the basis of the "thermal spike" model consideration was given to effects of high-energy ion implantation into targets with different types of conductivity (Ge, Cu, Pb). Numerical calculation of excited region temperature as a function of time and distance from track axis is presented.ru
dc.language.isoruru
dc.publisherМинск : Універсітэцкаеru
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleТермические пики при прохождении высокоэнергетических ионов в кристаллах и формирование трековru
dc.typearticleru
Appears in Collections:1997, №1 (январь)

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