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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/215216
Title: Novel nitrogen-hydrogen defects in CVD diamond
Authors: Zaitsev, A. M.
Moe, K.
Wang, W.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2018
Publisher: Минск : БГУ
Citation: Материалы и структуры современной электроники : материалы VIII Междунар. науч. конф., Минск, 10–12 окт. 2018 г. / Белорус. гос. ун-т ; редкол.: В. Б. Оджаев (отв. ред.) [и др.]. – Минск : БГУ, 2018. – С. 141-146.
Abstract: Nitrogen-doped CVD diamond treated with electron irradiation and subsequent annealing at temperatures from 860 to 1900 °C was studied using FTIR absorption. It was found that nitrogen impurity produces many novel optical centers active in infrared spectral range. The most prominent of them are ascribed to nitrogen-hydrogen complexes. These centers produce absorption lines at 2827, 2874, 2906, 2949, 2990, 3031, 3107, 3123 and 3310 cm-1. Two characteristic absorptions at wavenumbers 1293 cm-1 and 1341 cm-1 were tentatively ascribed to a modified form of nitrogen A-aggregates. A conclusion has been made that in nitrogen-doped CVD diamonds nitrogen atoms may form nitrogen-hydrogen clusters, which are can be considered as modified A-defects.
Description: Дефектно-примесная инженерия. Радиационные эффекты в полупроводниках
URI: http://elib.bsu.by/handle/123456789/215216
ISBN: 978-985-566-671-5
Appears in Collections:2018. Материалы и структуры современной электроники

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