Logo BSU

Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/215216
Full metadata record
DC FieldValueLanguage
dc.contributor.authorZaitsev, A. M.
dc.contributor.authorMoe, K.
dc.contributor.authorWang, W.
dc.date.accessioned2019-02-21T13:28:16Z-
dc.date.available2019-02-21T13:28:16Z-
dc.date.issued2018
dc.identifier.citationМатериалы и структуры современной электроники : материалы VIII Междунар. науч. конф., Минск, 10–12 окт. 2018 г. / Белорус. гос. ун-т ; редкол.: В. Б. Оджаев (отв. ред.) [и др.]. – Минск : БГУ, 2018. – С. 141-146.
dc.identifier.isbn978-985-566-671-5
dc.identifier.urihttp://elib.bsu.by/handle/123456789/215216-
dc.descriptionДефектно-примесная инженерия. Радиационные эффекты в полупроводниках
dc.description.abstractNitrogen-doped CVD diamond treated with electron irradiation and subsequent annealing at temperatures from 860 to 1900 °C was studied using FTIR absorption. It was found that nitrogen impurity produces many novel optical centers active in infrared spectral range. The most prominent of them are ascribed to nitrogen-hydrogen complexes. These centers produce absorption lines at 2827, 2874, 2906, 2949, 2990, 3031, 3107, 3123 and 3310 cm-1. Two characteristic absorptions at wavenumbers 1293 cm-1 and 1341 cm-1 were tentatively ascribed to a modified form of nitrogen A-aggregates. A conclusion has been made that in nitrogen-doped CVD diamonds nitrogen atoms may form nitrogen-hydrogen clusters, which are can be considered as modified A-defects.
dc.language.isoen
dc.publisherМинск : БГУ
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
dc.titleNovel nitrogen-hydrogen defects in CVD diamond
dc.typeconference paper
Appears in Collections:2018. Материалы и структуры современной электроники

Files in This Item:
File Description SizeFormat 
141-146.pdf394,66 kBAdobe PDFView/Open
Show simple item record Google Scholar



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.