Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/211332
Title: | Трековая преципитация в пересыщенных слоях Si0,5Ge0,5-сплавов |
Authors: | Гайдук, Петр Иванович Траутман, Кристина Толемонд, Мархель Ларсен, Арне Н. |
Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
Issue Date: | 2003 |
Publisher: | Минск : БГУ |
Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2003. - № 3. – С. 31-35. |
Abstract: | We report the first observation of latent tracks in a single-crystalline Si0,5Ge0,5 alloy layers irradiated with 1,3 GeV U ions in the electronic stopping power regime. Transmission electron microscopy in both conventional and high-resolution mode reveals more or less discontinuous tracks depending on the composition of the Si1-xGex alloy and on the arsenic doping level. The morphology and the atomic structure of the tracks are analyzed. The results are discussed in the frame of the thermal-spike approach which assumes both track melting and imperfect crystallization. |
URI: | http://elib.bsu.by/handle/123456789/211332 |
ISSN: | 0321-0367 |
Licence: | info:eu-repo/semantics/openAccess |
Appears in Collections: | 2003, №3 (сентябрь) |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.