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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/211332
Title: Трековая преципитация в пересыщенных слоях Si0,5Ge0,5-сплавов
Authors: Гайдук, Петр Иванович
Траутман, Кристина
Толемонд, Мархель
Ларсен, Арне Н.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2003
Publisher: Минск : БГУ
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2003. - № 3. – С. 31-35.
Abstract: We report the first observation of latent tracks in a single-crystalline Si0,5Ge0,5 alloy layers irradiated with 1,3 GeV U ions in the electronic stopping power regime. Transmission electron microscopy in both conventional and high-resolution mode reveals more or less discontinuous tracks depending on the composition of the Si1-xGex alloy and on the arsenic doping level. The morphology and the atomic structure of the tracks are analyzed. The results are discussed in the frame of the thermal-spike approach which assumes both track melting and imperfect crystallization.
URI: http://elib.bsu.by/handle/123456789/211332
ISSN: 0321-0367
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:2003, №3 (сентябрь)

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