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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/211329
Title: Магниторезистивный эффект слабо разупорядоченного гетероперехода GaAs - AlGaAs
Authors: Бумай, Юрий Александрович
Лукашевич, Михаил Григорьевич
Скрипка, Дмитрий Алексеевич
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2003
Publisher: Минск : БГУ
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2003. - № 3. – С. 18-24.
Abstract: Weak localization and electron-electron interaction processes in two dimensional electron (2D) gas of single GaAs - AlGaAs heterojunction with two occupied qantum subbands have been studied using low temperature transport measurements. The transport characteristics have been interpreted within the model with two conductive layers corresponding to 2D and 3D electron gasses. The effects of weak localization on transport properties of two-dimensional (2D) electron gas in low magnetic fields and electron-electron interaction in large ones have been observed.
URI: http://elib.bsu.by/handle/123456789/211329
ISSN: 0321-0367
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:2003, №3 (сентябрь)

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