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https://elib.bsu.by/handle/123456789/208374| Title: | Investigation of nonradiative recombination processes in gallium phosphide |
| Authors: | Bondarenko, G. G. Skazochkin, A. V. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2003 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом: материалы V междунар. науч. конф., 6-9 окт. 2003 г., Минск. — Мн.: БГУ, 2003. — С. 332-334. |
| Abstract: | Ammonia flow change effect on phone Si concentration, free carrier concentration, deep centres and radiative recombination efficiency in GaP:N vapour phase layers is investigated by secondary ions mass spectroscopy methods, by deep levels transient spectroscopy and lumininescence, Received data have been used for building of empirical models of some electronic and hole traps in GaP. |
| URI: | http://elib.bsu.by/handle/123456789/208374 |
| ISBN: | 985-445-236-0; 985-445-235-2 |
| Appears in Collections: | 2003. Взаимодействие излучений с твердым телом |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 332-334.pdf | 2,95 MB | Adobe PDF | View/Open |
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