Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/207136| Title: | Activation energy of technological thermodonors in transmutation doped gamma irradiated N-Si(P) |
| Authors: | Ermakov, V. M. Khivrich, V. I. Kolomoets, V. V. Machulin, V. F. Panasjuk, L. I. Prokopenko, I. V. Sus, B. B. Venger, E. F. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2003 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом: материалы V междунар. науч. конф., 6-9 окт. 2003 г., Минск. — Мн.: БГУ, 2003. — С. 139-141. |
| Abstract: | Temperature dependence of Hall coefficient in neutron transmutation doped (NTD) n-Si(P) crystals was measured and the activation energies of high temperature technological thermodonors were determined. Tensoeffect mechanisms in high uniaxially strained NTD y-irradiated n-Si(P) were examined in order to explain the behaviors of the experimental dependencies. |
| URI: | http://elib.bsu.by/handle/123456789/207136 |
| ISBN: | 985-445-236-0; 985-445-235-2 |
| Appears in Collections: | 2003. Взаимодействие излучений с твердым телом |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 139-141.pdf | 2,58 MB | Adobe PDF | View/Open |
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