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https://elib.bsu.by/handle/123456789/206547| Title: | Модификация рекомбинационных свойств р-кремния путем введения низкотемпературных термодоноров |
| Other Titles: | The modification of recombined properties of p-silicon by means of introducing low-temperature thermodonors / I.I.Kolkovskii, V.V.Lukjanitsa |
| Authors: | Колковский, И. И. Лукьяница, В. В. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 1999 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом: Материалы III междунар. науч. конф., 6-8 окт. 1999 г., Минск: В 2 ч. Ч.2. — Мн.: БГУ, 1999. — С. 54-56. |
| Abstract: | Представлены результаты исследований влияния длительности термообработки (Т=430°С) на время жизни (т) носителей заряда в монокристаллах кремния большого диаметра. Установлено, что выявленные немонотонные изменения т связаны с диффузионно-ограниченной рекомбинацией носителей заряда и накоплением в кристаллах p-Si термодоноров ТД-1, эффективно образующихся при данном виде термообработки. Установленные закономерности позволяют модифицировать рекомбинационные свойства кремния и тем самым управлять величиной т. |
| Abstract (in another language): | The results of investigation of main factors determining the changes for the lifetime of charge carries in silicon monocrystals of great diameter on low-temperature (430°C) treatment are represented in the above study. The investigation have been carried out on dislocation-free crystals of p-silicon (p=10 Om-cm) grown using Chokholsky method. The results have been obtained on the basis of measuring lifetime at injection levels (j=KTi-K T j in the samples studied by method of conductivity modulation in point contact under different temperatures (t=250-400 K) before thermotreatment and at its different stages (t=0,5+10 hours). It has been determined that in initial crystals the main recombined-active defects were structural impairments representing growth microdefects and precipitates. It has been shown that the velocity of recombination of charge carriers is limited by the stage of their diffusion to such defects. Thermotreatment of crystals under the temperature t=430"C results in generation of oxygen-containing thermodonors, the accumulation ofthat influences upon charge transfer in the volume of crystal and is responsible for the observed non-monotonous changes of lifetime of change carriers with the growing time of thermotreatment |
| URI: | http://elib.bsu.by/handle/123456789/206547 |
| ISBN: | 985-445-237-9 |
| Appears in Collections: | 1999. Взаимодействие излучений с твердым телом |
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