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https://elib.bsu.by/handle/123456789/206536| Заглавие документа: | Модификация свойств III-V материалов c использованием сложного легирования |
| Другое заглавие: | Modification of III-V material properties with the use of complex doping / I.A.Bolshakova, S.I.Krukovsky, I.A.Mrykhin |
| Авторы: | Большакова, И. А. Круковский, С. И. Мрыхин, И. А. |
| Тема: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Дата публикации: | 1999 |
| Издатель: | Минск : БГУ |
| Библиографическое описание источника: | Взаимодействие излучений с твердым телом: Материалы III междунар. науч. конф., 6-8 окт. 1999 г., Минск: В 2 ч. Ч.2. — Мн.: БГУ, 1999. — С. 27-29. |
| Аннотация: | В работе проведены исследования влияния быстрых нейтронов 100 кэВ - 13 Мэв из флюенсом 1014 н/смг на микрокристаллы и эпитаксиальние слои InAs1 InSb1 GaAsl полученные методами газотранспортных реакций и жидкофазной эпитаксии. Обнаружено, что легирование микрокристаллов редкоземельными и переходными элементами повышает радиационную стойкость материалов. В лучших образцах изменение концентрации основных носителей не превышает 0 1%. Полученные результаты объясняются сточки зрения концепции радиационной стойкости материалов, базирующейся на существовании фундаментального уровня электронейтральности в полупроводниках. |
| Аннотация (на другом языке): | Semiconductor materials which are produced by the domestic industries of Russia and Ukraine, and by a number of foreign companies, are featured by insufficient radiation resistance. Parameters of sensors based on the semiconductor materials are subject to change by 3-5% minimum under hard radiation conditions. For devices intended for use under radiation conditions, this defines the problem of semiconductor material generation with improved radiation resistance. Aim of this work is to investigate the influence of metallurgical doping by rare-earth and transitional elements upon radiation resistance of Ill-V materials. InSb and InAs microcrystals were obtained by means of vapor-transport reactions in closed volume, GaAs epitaxial layers were obtained by means of low-temperature LPE from gallium melt. To study radiation resistance of investigated materials they were exposed to fast neutrons with the energy of 100 keV-ИЗ MeV and fluence of 1014 n cm'2 in the pulsed neutron reactor at the Joint Institute for Nuclear Research (Moscow region, Dubna). Дп/п value (n - initial carrier concentration in samples, An - concentration change under irradiation) served as a measure of radiation resistance of a material. For all investigated materials one can observe that Дп/n decreases when Yb, Cr, Mn, Al doping is used. For InSb samples with concentration of (1+3)-1017 cm'3 Дп/n value does not exceed 0.12%. One can notice a significant decrease of An/n in GaAs doped by Yb and Al simultaneously. Carrier concentration changes caused by irradiation do not exceed 0.1% for the best samples. In order to explain the obtained results we propose one of the possible models. It is known that oxygen is one of essential impurities which is induced to the Ill-V materials from the synthesis components and the accessory materials, and which generates donor levels. It interacts with primary radiation defects and generate complexes with deep acceptor levels. These levels efficiently bond main carriers in semiconductor materials under radiation exposure, which leads to changes of electrophysical parameters of semiconductors. From the other side, generation rate of deep acceptor levels would decrease much if one induces gettering centers of point radiation defects into a semiconductor. Featuring by covalent radius which differs from lattice atom radiuses for most of Ill-V materials, rare-earth elements (REE) form an elastic field in the crystal, that means in the same time they are drains for primary radiation defects. The use of complex metallurgical doping by rare-earth elements for obtaining of Ill-V material allows one to improve radiation resistance significantly. It is found out that changes of main carrier concentration caused by fast neutron irradiation with the fluence of 1014 non'2, do not exceed 0.1% for the best InAs, InSb and GaAs samples. |
| URI документа: | http://elib.bsu.by/handle/123456789/206536 |
| ISBN: | 985-445-237-9 |
| Располагается в коллекциях: | 1999. Взаимодействие излучений с твердым телом |
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