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https://elib.bsu.by/handle/123456789/204261| Title: | The effect of ionizing radiation on the structures formed on the base of silicon with the addition of rare-earth and isovalent impurities |
| Authors: | Brinkevich, D. I. Petrov, V. V. Prosolovich, V. S. Yankovski, Yu. N. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2001 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом: материалы IV Междунар. науч. конф., 3-5 окт. 2001 г., Минск. — Мн.: БГУ, 2001. — С. 117-118 |
| Abstract: | II is shown that the use of silicon doped by Ge and Lu as substrates for epitaxial layers allows to improve the stability of p-n-junctions and MOS - structures to the radiation effect. Lu is more effective in this case. Shift current of voltage of the flat zones and the threshold voltage at MOS - structures irradiation produced on Si:Lu were approximately half as much than for the analogous test samples. |
| URI: | http://elib.bsu.by/handle/123456789/204261 |
| ISBN: | 985-445-236-0 |
| Appears in Collections: | 2001. Взаимодействие излучений с твердым телом |
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