The effect of ionizing radiation on the structures formed on the base of silicon with the addition of rare-earth and isovalent impurities

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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/204261

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DC Field	Value	Language
dc.contributor.author	Brinkevich, D. I.	-
dc.contributor.author	Petrov, V. V.	-
dc.contributor.author	Prosolovich, V. S.	-
dc.contributor.author	Yankovski, Yu. N.	-
dc.date.accessioned	2018-08-27T06:39:20Z	-
dc.date.available	2018-08-27T06:39:20Z	-
dc.date.issued	2001	-
dc.identifier.citation	Взаимодействие излучений с твердым телом: материалы IV Междунар. науч. конф., 3-5 окт. 2001 г., Минск. — Мн.: БГУ, 2001. — С. 117-118	ru
dc.identifier.isbn	985-445-236-0	-
dc.identifier.uri	http://elib.bsu.by/handle/123456789/204261	-
dc.description.abstract	II is shown that the use of silicon doped by Ge and Lu as substrates for epitaxial layers allows to improve the stability of p-n-junctions and MOS - structures to the radiation effect. Lu is more effective in this case. Shift current of voltage of the flat zones and the threshold voltage at MOS - structures irradiation produced on Si:Lu were approximately half as much than for the analogous test samples.	ru
dc.language.iso	ru	ru
dc.publisher	Минск : БГУ	ru
dc.subject	ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика	ru
dc.title	The effect of ionizing radiation on the structures formed on the base of silicon with the addition of rare-earth and isovalent impurities	ru
dc.type	conference paper	ru
Appears in Collections:	2001. Взаимодействие излучений с твердым телом

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