Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/203899| Title: | A new technology of fabricating ohmic metal-silicon contacts |
| Authors: | Senko, S. F. Snitovsky, Yu. P. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2001 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом: материалы IV Междунар. науч. конф., 3-5 окт. 2001 г., Минск. — Мн.: БГУ, 2001. — С. 89 |
| Abstract: | Results of performing dry cleaning, doping of silicon in BF3+H2 and BF3+H2+CF4 plasma during fabrication of ohmic constants m equipment having the same hardware configuration have been considered based on the concept of a closed manufacturing system |
| URI: | http://elib.bsu.by/handle/123456789/203899 |
| ISBN: | 985-445-236-0 |
| Appears in Collections: | 2001. Взаимодействие излучений с твердым телом |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.