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https://elib.bsu.by/handle/123456789/196313| Title: | Эпитаксиальные слои кремния, легированные германием и лютецием |
| Authors: | Бринкевич, Дмитрий Иванович Просолович, Владислав Савельевич Янковский, Юрий Николаевич |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2002 |
| Publisher: | Минск : БГУ |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2002. - № 2. – С. 53-55. |
| Abstract: | The possibility of the use of Lu and Ge doped silicon in the base MOS-technology were studied. Doping by these impurities decreased the quantity of leakage current and increased the breakdown voltage of p - n-junctions and Si - Si02-polySi structures. It is shown that Ge and Lu doping of the epitaxial layers allows to improve the stability of p - n-junctions and MOS-structures to the radiation effects. |
| URI: | http://elib.bsu.by/handle/123456789/196313 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 2002, №2 (май) |
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