Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/196240| Title: | Сравнительный анализ быстродействия биполярного и МОП-транзисторов |
| Authors: | Белоус, Анатолий Иванович Ефименко, Сергей Афанасьевич Понарядов, Владимир Васильевич Прибыльский, Александр Владимирович |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2001 |
| Publisher: | Минск : БГУ |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2001. - № 2. – С. 22-28. |
| Abstract: | The article is dedicated to investigation of key characteristics of bipolar and MOS-transistors, determining their high speed as parts of Bi-CMOS LSIC. Fly-over time spaces through active structure in “source-drain” and “emitter-collector” are compared, slope, current density and geometrical dimensions of n-p-n- and n-MOS-transistors are defined. Demands to boundary frequency of bipolar transistor in Bi-CMOS LSIC are specified. The results of experimental investigation are provided. |
| URI: | http://elib.bsu.by/handle/123456789/196240 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 2001, №2 (май) |
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