Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/196239| Title: | Аппроксимация начального участка ВАХ высоколегированного МОП-ПТ |
| Authors: | Андреев, Альберт Данилович Бельский, Александр Михайлович Валиев, Александр Анатольевич |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2001 |
| Publisher: | Минск : БГУ |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2001. - № 2. – С. 19-22. |
| Abstract: | The approximation of the high-dopant MOS FET current-voltage characteristic before saturation in a drain voltage range 0-2qy is offered. This method allows to calculate drain current, drain current saturation voltage in the case when constructive-technological parameters of the device and gate voltage are given. It is shown that account of the drain voltage dependence of effective mobility is not necessary in this approximation. |
| URI: | http://elib.bsu.by/handle/123456789/196239 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 2001, №2 (май) |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.