Logo BSU

Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/196239
Title: Аппроксимация начального участка ВАХ высоколегированного МОП-ПТ
Authors: Андреев, Альберт Данилович
Бельский, Александр Михайлович
Валиев, Александр Анатольевич
Issue Date: 2001
Publisher: Минск : БГУ
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2001. - № 2. – С. 19-22.
Abstract: The approximation of the high-dopant MOS FET current-voltage characteristic before saturation in a drain voltage range 0-2qy is offered. This method allows to calculate drain current, drain current saturation voltage in the case when constructive-technological parameters of the device and gate voltage are given. It is shown that account of the drain voltage dependence of effective mobility is not necessary in this approximation.
URI: http://elib.bsu.by/handle/123456789/196239
ISSN: 0321-0367
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:2001, №2 (май)

Files in This Item:
File Description SizeFormat 
19-22.pdf2,55 MBAdobe PDFView/Open
Show full item record Google Scholar

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.