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https://elib.bsu.by/handle/123456789/195089| Title: | Концентрационные зависимости подвижности носителей заряда и удельного сопротивления в имплантированных сплавах Si1-xGex |
| Authors: | Гайдук, И. И. Чернявская, Ю. В. Ларсен, А. Н. Тишков, В. С. Комаров, Ф. Ф. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2000 |
| Publisher: | Минск : БГУ |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2000. - № 3. – С. 18-22. |
| Abstract: | Carrier mobility and resistivity of epitaxially grown Si1-xGex layers are investigated by differential Hall measurements. The layers of Si1-xGex alloy were epitaxially grown by MBB on Si waters. Implantation of As (8-1015 cm -2) as well as rapid thermal annealing were applied for alloy doping. The dependence of carrier mobility and resistivity are obtained as a function of Si1-xGex commposition. |
| URI: | http://elib.bsu.by/handle/123456789/195089 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 2000, №3 (сентябрь) |
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