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https://elib.bsu.by/handle/123456789/170234| Title: | Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions |
| Authors: | Al’zhanova, A. Dauletbekova, A. Komarov, F. Vlasukova, L. Yuvchenko, V. Akilbekov, A. Zdorovets, M. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2016 |
| Publisher: | Elsevier Science Publishing Company, Inc. |
| Citation: | Nuclear Instruments and Methods in Physics Research B. - 2016. - Vol. 374. - Pp. 121–124. |
| Abstract: | The process of latent track etching in SiO2/Si structures irradiated with40Ar (38 MeV),84Kr (59 MeV) and 132Xe (133 and 200 MeV) ions has been investigated. The experimental results of SiO2etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3 nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO2 |
| URI: | http://elib.bsu.by/handle/123456789/170234 |
| ISSN: | 0168-583X |
| Appears in Collections: | Статьи сотрудников НИИ ПФП |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 121-124.pdf | 1,87 MB | Adobe PDF | View/Open |
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