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https://elib.bsu.by/handle/123456789/170234Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Al’zhanova, A. | - |
| dc.contributor.author | Dauletbekova, A. | - |
| dc.contributor.author | Komarov, F. | - |
| dc.contributor.author | Vlasukova, L. | - |
| dc.contributor.author | Yuvchenko, V. | - |
| dc.contributor.author | Akilbekov, A. | - |
| dc.contributor.author | Zdorovets, M. | - |
| dc.date.accessioned | 2017-04-05T09:09:09Z | - |
| dc.date.available | 2017-04-05T09:09:09Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.citation | Nuclear Instruments and Methods in Physics Research B. - 2016. - Vol. 374. - Pp. 121–124. | ru |
| dc.identifier.issn | 0168-583X | - |
| dc.identifier.uri | http://elib.bsu.by/handle/123456789/170234 | - |
| dc.description.abstract | The process of latent track etching in SiO2/Si structures irradiated with40Ar (38 MeV),84Kr (59 MeV) and 132Xe (133 and 200 MeV) ions has been investigated. The experimental results of SiO2etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3 nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO2 | ru |
| dc.language.iso | en | ru |
| dc.publisher | Elsevier Science Publishing Company, Inc. | ru |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions | ru |
| dc.type | journal article | ru |
| Appears in Collections: | Статьи сотрудников НИИ ПФП | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 121-124.pdf | 1,87 MB | Adobe PDF | View/Open |
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