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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/170234
Title: Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions
Authors: Al’zhanova, A.
Dauletbekova, A.
Komarov, F.
Vlasukova, L.
Yuvchenko, V.
Akilbekov, A.
Zdorovets, M.
Issue Date: 2016
Publisher: Elsevier Science Publishing Company, Inc.
Citation: Nuclear Instruments and Methods in Physics Research B. - 2016. - Vol. 374. - Pp. 121–124.
Abstract: The process of latent track etching in SiO2/Si structures irradiated with40Ar (38 MeV),84Kr (59 MeV) and 132Xe (133 and 200 MeV) ions has been investigated. The experimental results of SiO2etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3 nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO2
URI: http://elib.bsu.by/handle/123456789/170234
ISSN: 0168-583X
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