Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/170218| Title: | Simulation of Radiation Effects in SiO2/Si Structures |
| Authors: | Komarov, F. F. Zayats, G. M. Komarov, A. F. Miskiewicz, S. A. Michailov, V. V. Komsta, H. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2015 |
| Publisher: | Polska Akademia Nauk |
| Citation: | Acta Physica Polonica A. - 2013. - Vol. 128, No. 5. - Pp. 857-860. |
| Abstract: | The space-time evolution of electric charge induced in the dielectric layer of simulated metal-insulator- semiconductor structures due to irradiation with X-rays is discussed. The system of equations used as a basis for the simulation model is solved iteratively by the efficient numerical method. The obtained simulation results correlate well with the respective data presented in other scientific publications |
| URI: | http://elib.bsu.by/handle/123456789/170218 |
| ISSN: | 0587-4246; 1898-794X (online) |
| Appears in Collections: | Статьи сотрудников НИИ ПФП |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 857-860.pdf | 387,27 kB | Adobe PDF | View/Open |
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