Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/169014| Title: | Negative differential resistance in n-type noncompensated silicon at low temperature |
| Authors: | Danilyuk, A. L. Trafimenko, A. G. Fedotov, A. K. Svito, I. A. Prischepa, S. L. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | Nov-2016 |
| Publisher: | AIP Publishing |
| Citation: | Applied Physics Letters. - 2016. - Vol. 109, Issue 22. - P. 222104-1 - 222104-4 |
| Abstract: | We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9–2.25 K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D− states in the upper Hubbard band due to the accumulation of the charge injected by current. |
| URI: | http://elib.bsu.by/handle/123456789/169014 |
| ISSN: | 0003-6951 |
| Appears in Collections: | Кафедра физики твердого тела и нанотехнологий (статьи) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Negative differential resistance in n-type noncompensated silicon at low temperature.pdf | 1,41 MB | Adobe PDF | View/Open |
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